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SOI is to place a thin layer of silicon on an insulating substrate. Devices based on the SOI structure will essentially reduce junction capacitance and leakage current, increase switching speed, reduce power consumption, and achieve high-speed, low-power operation.
Product specification
Dimensions | 4inch；6inch；8inch |
Process | Smart cut; Bonding; SIMOX |
Type | N/P |
Resistance | Custom |
Top crystal thickness | 0.22～50μm |
Buried oxide layer | 0.4～4μm |
Base layer thickness | 100～500μm |
TTV | <3μm |
Particle | <10@0.3μm |
Comparison of SIMOX, Bonding and Simbond three methods
Items | SIMOX | Bonding | Simbond |
Wafers | One wafer | Two wafers | Two wafers |
Wafer size | 4', 5', 6' & 8' | 4', 5', 6' & 8' | 4', 5', 6' & 8' |
Process | Two basic steps | Three basic steps | Four basic steps |
SOI thickness | Thin/ultra-thin | Thick (>1.5um) | Thin/ultra thin/thick |
BOX thickness | Thin (<400nm) | Thin/thick | Thin/thick |
BOX property | Good/Average | Good | Good |
SOI uniformity | Good | Average | Good |
SOI application
| SOI high-speed characteristics | Microprocessor, high-speed communication, three-dimensional image processing, advanced multimedia |
| SOI low voltage and low power consumption characteristics | Mobile computers, mobile phones, portable electronic equipment, radio frequency integration, smart power devices and other fields that require low power consumption and fast heat dissipation, such as single-chip system SOC, micro satellites, etc. |
| SOI used in harsh environments | High-temperature devices, high-voltage devices, satellites or other space applications, weapon control systems, etc. |
| SOI optical communication and MEMS applications | As a structural material, it can be used to make silicon-based integrated optoelectronic devices, which are used in the interface of high-speed broadband Internet and other optical networks. In addition, SOI wafers are also widely used in the production of microelectromechanical system (MEMS) devices, such as sensors, etc. |
Advantages of Fast Silver SOI wafers mainly have the following characteristics:
1. Improve running speed
Under a certain voltage, the operating speed of circuits built on Simao SOI materials is 30% higher than that of circuits built on ordinary silicon materials, which greatly improves the performance of microprocessors and other devices.
2. Reduce energy consumption
Fast Silver SOI material can reduce energy consumption by nearly 30%-70%, and is especially suitable for areas where energy consumption is relatively high.
3. Improve running performance
Fast Silver SOI material can withstand high temperatures as high as 350 degrees Celsius or even 500 degrees Celsius, which is especially suitable for equipment that must operate well in harsh environments.
4. Reduce package size
Fast Silver SOI material can meet the requirements of IC manufacturers for smaller and smaller products
Fast Silver offers various semiconductor crystals:SOI material, GaAs, ZnO, SiC, Ge and Si.
Warmly welcome new and regular customers' inquiry!
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