Application of sputtering target

 
Sputtering targets are often used in the semiconductor industry, recording media industry and advanced display industry. Among different industries, the semiconductor integrated circuit manufacturing industry has the highest quality requirements for sputtering targets.
The basic operations of integrated circuit wafer manufacturing can be divided into four categories: thin film production, photolithography, doping and heat treatment. The preparation of metal thin films has become one of the key factors affecting the development of ICs.
At present, the preparation methods of metal thin films include: physical vapor deposition (PVD), chemical vapor deposition (CVD), and electroplating.
 

Principle of sputtering film formation

Ar gas was introduced into the decompressed container, and the film-forming substrate was set as the anode and the target was set as the cathode in the container. By applying a voltage between the electrodes, a glow discharge (plasma) is generated, and the Ar gas is partially ionized. The negative electric field of the cathode accelerates the Ar in the plasma, hits the surface of the target, and releases the constituent atoms of the target through this energy exchange. The released atoms or atom clusters (wire bundles) are stacked on the film-forming electrode plate to form a film with the same composition as the target material. Since the target material is a target of Ar ions, it is called a "target".
 

Types of sputtering targets for semiconductors

In the process of integrated circuit manufacturing, sputtering targets are used to prepare interconnection film and barrier film. At present, the most commonly used interconnect materials for integrated circuit manufacturing are Al and Al alloys, and the corresponding barrier metal is Ti or WTi.
 

Semiconductor thin film materials and targets

Tungsten (W) series

Composition: W, W-Si, W-Ti
Function: plug, electrode, diffusion barrier
 

Molybdenum (Mo) series

 
Composition: Mo, Mo-Si
Function: electrode, diffusion barrier
 

Cobalt (Co) series

 
Composition: Co, Co-Si
Function: Electrode
 

Tantalum (Ta) series

 
Composition:: Ta, Ta-Si, Ta-B
Function: diffusion barrier
 

Titanium (Ti) series

 
Composition: Ti, Ti-Si
Function: diffusion barrier
 

Ruthenium (Ru) series

 
Composition: Ru, SrRuO4
Function: Capacitor electrode
 

Iridium (Ir) series

 
Composition: Ir, IrO2
Function: Capacitor electrode
 

Aluminum (Al) series

 
Composition: Al-Cu-Si
Function: interconnection line
 

Copper(Cu) series

 
Composition: Cu, Cu alloy
Function: interconnection line
 
From the above, we can see that sputtering targets in the semiconductor industry are mostly metal alloy targets.
Fast Silver not only provides high-purity elemental metal targets, but also customizable metal alloy targets.