Phase-Change Memory is made using a Germanium Antimony Tellurium (GST) alloy, and takes advantage of rapid heat-controlled changes in the material’s physical property between amorphous and crystalline states. These states, which correspond to logic 0 and 1, are electrically differentiated by high resistance in the amorphous state (logic 0) and low resistance in the crystalline state (Logic 1). PCM, which reads and writes at low voltage, offers several substantial advantages over Flash and other embedded memory technologies: Write Performance / Data Retention, High Density / Low Power Roadmap, Robust Performance, Flexible Back-end Proces.

Sputtering targets including GeSbTe, ScTeSb, GeSe(Si, Te) are widely used in Phase-Change Memory thin film deposition.