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Aluminunm Oxide sputtering target
Aluminum oxide (Al2O3) films, as one of the most important electronic materials, have been of interest in a variety of semiconductors, displays, sensors, and environment-friendly energy devices because of their high permittivity, excellent electrical insulation, wide bandgap, and superior encapsulation property.
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| Specifications | |||
| Material Type | Aluminum Oxide | ||
| Symbol | Al2O3 | ||
| Purity | 99.99% | ||
| Size | 1.00" Dia. x 0.125" Thick ~8.00" Dia x 0.250" Thick / Custom | ||
| Package Unit | 1pc | ||
| Atomic Weight | 107.8682 | Z Ratio | 0.336 |
| Color/Appearance | White, Crystalline Solid | Sputter | RF-R |
| Theoretical Density (g/cc) | 3.97 | Max Power Density(Watts/Square Inch) | 20* |
| Melting Point (°C) | 2,072 | Type of Bond | Indium, Elastomer |
| Coefficient of Thermal Expansion | 18.9 x 10-6/K | Comments | Sapphire excellent in E-beam; forms smooth, hard films. Thermal evaporation likely not possible. |
