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Silicon Nitride (Si3N4) Sputtering Target

Description:

Silicon Nitride (Si3N4) Sputtering TargetApplications of Si3N4 sputter target:1. Semiconductor & MicroelectronicsHigh-k Dielectric Layers: Si₃N₄ films act as insulating barriers in transistors and memory devices, enhancing capacitance while minimizing leakage currents due to their high dielect...

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Silicon Nitride (Si3N4) Sputtering Target




Applications


1. Semiconductor & Microelectronics

High-k Dielectric Layers: Si₃N₄ films act as insulating barriers in transistors and memory devices, enhancing capacitance while minimizing leakage 

currents due to their high dielectric strength.


Anti-Reflective Coatings (ARC): Critical for photolithography, Si₃N₄ layers suppress reflection at 193–365 nm wavelengths, improving pattern 

resolution in EUV and deep-UV lithography.


Passivation Layers: Protect silicon wafers from ionic contamination and moisture, significantly extending device reliability.


2. Optics & Photonics

Low-Loss Waveguides: With near-zero optical absorption from UV to IR, Si₃N₄ films enable high-density photonic integrated circuits (PICs), 

outperforming SOI waveguides by 3–4 orders of magnitude in loss reduction.


Anti-Reflective & UV-Blocking Coatings: Optimize transmission for lenses, solar cells, and displays while providing durable surface protection.


3. Renewable Energy

Solar Cell Passivation: Si₃N₄ coatings on photovoltaic panels reduce reflection losses and serve as moisture/chemical barriers, boosting efficiency and lifespan.


Fuel Cell Components: Thin films enhance corrosion resistance in bipolar plates and membrane electrodes, particularly in alkaline environments68.


4. Advanced Functional Coatings

Wear-Resistant Layers: For cutting tools, bearings, and aerospace components, leveraging hardness (>1,500 HV) and low friction coefficients.


Biocompatible Interfaces: Used in medical implants and surgical tools due to bio-inertness and antibacterial properties.


5. Emerging Research Domains

Power Electronics: Enables direct bonding of Cu-Si₃N₄ substrates for high-temperature, void-free insulated circuit boards, replacing traditional AMB techniques.


Quantum Sensors: Low-stress Si₃N₄ membranes serve as interferometer components in gravity-wave detectors.

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Si3N4 sputtering target

Specifications
Material TypeSilicon Nitride
SymbolSi3N4
Purity99.9%
Size1.00" Dia. x 0.125" Thick ~8.00" Dia x  0.250" Thick / Custom
Package Unit1pc
Theoretical Density (g/cc)3.44
Melting Point (°C)1,900SputterRF, RF-R
Type of BondIndium, ElastomerMax Power Density
(Watts/Square Inch)
20*


 


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