Indium Oxide (In2O3) Sputtering Target

Indium oxide (In₂O₃) sputtering targets are indispensable in thin-film technology for synthesizing high-performance functional layers. 

Below is a detailed overview of their key applications, supported by cutting-edge studies from international academic journals:

1. Thin-Film Transistors (TFTs) and Display Technology

High-Mobility TFTs: In₂O₃ films deposited via sputtering enable polycrystalline transistors with field-effect mobility exceeding 139 cm²·V⁻¹·s⁻¹ 

after hydrogenation and low-temperature solid-phase crystallization (SPC). This outperforms amorphous silicon and competes with low-temperature polysilicon (LTPS), 

making them ideal for next-generation displays and flexible electronics.

Ultra-Thin Channel Layers: Atomic-layer-deposited (ALD) amorphous In₂O₃ films (0.7–1.5 nm thick) exhibit tunable threshold voltages and high on/off ratios (>10⁷). 

This scalability addresses back-end-of-line (BEOL) compatibility for monolithic 3D integration in advanced microelectronics.

2. Transparent Conductive Electrodes and Optoelectronics

Doped In₂O₃ Systems: Co-sputtering with dopants (e.g., Mg, Sn, Zn) optimizes electrical and optical properties. For instance:

Mg-doped In₂O₃ (In₂O₃:Mg) enhances UV photodetection, achieving a responsivity of 2.6 A/W and UV-visible rejection ratios up to 4.8×10⁵.

Sn-doped In₂O₃ (ITO) and In₂O₃–SnO₂–ZnO ternary targets produce low-resistivity films for solar cells and touch panels

3. Gas Sensors

Heterostructured Nanosensors: Electrospun In₂O₃/α-Fe₂O₃ nanotubes exhibit high ethanol sensitivity (ppm-level detection) and fast response/recovery 

at low operating temperatures. The cubic In₂O₃ nanocrystals enhance surface reactivity, enabling ultrasensitive chemiresistive sensors.

4. Photocatalysis and Energy Applications

S-Scheme Heterojunctions: MOF-derived CuO@In₂O₃ core-shell structures facilitate efficient CO₂-to-fuel conversion. The In₂O₃ shell promotes charge separation, 

achieving 3× higher activity than pristine oxides.

Bandgap Engineering: Co-doping In₂O₃ with transition metals (e.g., Co) tailors electronic structures without altering bandgaps significantly, benefiting photoelectrochemical devices.