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Indium Gallium Zinc Oxide (IGZO) Sputtering Target

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Indium Gallium Zinc Oxide IGZO Sputter TargetsIGZO (Indium Gallium Zinc Oxide) sputtering targets represent a class of high-performance oxide semiconductor materials essential for depositing functional thin films. These targets enable precise fabrication of IGZO films with exceptional electronic and...

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Indium Gallium Zinc Oxide IGZO Sputter Targets


IGZO (Indium Gallium Zinc Oxide) sputtering targets represent a class of high-performance oxide semiconductor materials 

essential for depositing functional thin films. These targets enable precise fabrication of IGZO films with exceptional electronic 

and optical properties, making them indispensable for next-generation devices in multidisciplinary research. Below we outline 

their key application domains relevant to academic and industrial R&D laboratories.


1. Thin-Film Transistors (TFTs) for Advanced Displays

IGZO films deposited via magnetron sputtering are widely adopted as channel layers in TFTs due to their high carrier mobility, 

low off-state current, and superior uniformity over large areas. These properties drive research in:

High-Resolution Displays: Enabling ultra-HD micro-OLEDs and LCDs with enhanced pixel response speeds and reduced power 

consumption.

Flexible Electronics: Facilitating low-temperature processing compatible with heat-sensitive polymer substrates for 

bendable/foldable displays.

Stability Engineering: Investigating passivation layers (e.g., AlOₓ) and annealing processes to improve TFT stability 

against electrical/optical stress.


2. Transparent Electrodes & Optoelectronic Devices

The tunable optoelectronic properties of IGZO films support applications demanding balanced conductivity 

and transparency:

Infrared (IR) Optoelectronics: Serving as transparent electrodes in SWIR (short-wave infrared) sensors due 

to broadband transparency from visible to IR regions.

Multi-Layer Stacks: Enabling low-stress, amorphous films with smooth surfaces for complex optical coatings 

in photodetectors and imaging systems.


3. Photovoltaic & Energy Devices

IGZO’s bandgap engineering and defect tolerance make it attractive for energy conversion/storage research:

Solar Cell Electrodes: Functioning as transparent conductive layers in CIGS and perovskite solar cells.

Thin-Film Battery Components: Depositing interfacial layers to enhance charge transport in solid-state lithium batteries.


4. Emerging & Flexible Electronics

The compatibility of IGZO with non-conventional substrates unlocks novel device architectures:

Wearable Sensors: Enabling transparent, flexible circuits for biosensing and health monitoring.

Printed Electronics: Serving as a benchmark material for hybrid printed-sputtered TFT development


IGZO Sputtering target


Specifications
Material TypeIndium Gallium Zinc Oxide
SymbolIn2O3:Ga2O3:ZnO=1:1:1 at%
Purity99.99%
Size1.00" Dia. x 0.125" Thick ~8.00" Dia x  0.250" Thick / Custom
Package Unit1pc
Theoretical Density (g/cc)6.5
Melting Point (°C)850 °CSputterRF, DC
Type of BondIndium, ElastomerMax Power Density
(Watts/Square Inch)
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