Sputtering Targets

Position:首页 >> Products >> Sputtering Targets

Boron Doped Aluminum Nitride (Al0.93B0.07N) Sputtering Target

Description:

Boron Doped Aluminum Nitride (Al0.93B0.07N) Sputtering TargetAluminum Boron Nitride (Al₀.₉₃B₀.₀₇N) Sputtering Targets: Enabling Next-Generation Functional Thin Films for Advanced ResearchAluminum Boron Nitride (Al₀.₉₃B₀.₀₇N) sputtering targets represent a cutting-edge class of ceramic ma...

Detail

Boron Doped Aluminum Nitride (Al0.93B0.07N) Sputtering Target

Aluminum Boron Nitride (Al₀.₉₃B₀.₀₇N) sputtering targets represent a cutting-edge class of ceramic materials engineered to 

deposit high-performance nitride thin films. By incorporating boron into the aluminum nitride lattice, 

these targets yield films with enhanced piezoelectric response, thermal stability, and wide-bandgap semiconductor properties. 

This makes AlBN an ideal material platform for pioneering research in microelectronics, photonics, energy harvesting, 

and extreme-environment applications. Below, we outline key domains where AlBN thin films demonstrate significant scientific 

and technological promise.


◼️ 1. High-Frequency Acoustic Wave Devices

AlBN films excel as piezoelectric layers for high-frequency surface acoustic wave (SAW) and bulk acoustic wave (BAW) resonators. 

Their high acoustic velocity and electromechanical coupling coefficient enable:

5G/6G RF Filters: Supporting ultra-wideband frequencies with reduced signal loss and improved power handling for next-generation communication systems.

Microacoustic Sensors: Facilitating high-sensitivity gas, pressure, or biosensors due to enhanced piezoelectric response and 

thermal stability compared to conventional AlN films.


◼️ 2. Piezoelectric MEMS and Energy Harvesting

The superior piezoelectric coefficient and thermal resilience of AlBN films advance microelectromechanical systems (MEMS) research:

Energy Harvesters: Enabling efficient vibration-to-electricity conversion in high-temperature environments 

(e.g., industrial or aerospace settings).

Precision Actuators: Supporting low-drive-voltage MEMS mirrors, switches, and nanopositioners for photonics and 

nanomanipulation applications.


◼️ 3. Ultraviolet (UV) Photonics and Optoelectronics

AlBN’s tunable wide-bandgap properties (up to ~6.2 eV) position it as a candidate for UV-centric devices:

Solar-Blind UV Detectors: Serving as active layers for deep-UV sensing free from visible-light interference.

UV-Transparent Electrodes: Enabling conductive yet optically transparent components for UV-LEDs and laser diodes.


◼️ 4. Protective and Tribological Coatings

AlBN films exhibit exceptional hardness and oxidation resistance, driving research in:

Hard Coatings for Cutting Tools: Extending service life of high-speed machining tools under thermal/mechanical stress.

Corrosion-Resistant Barriers: Protecting sensitive components in aggressive chemical or high-humidity environments.


◼️ 5. High-Temperature and Harsh-Environment Electronics

The stability of AlBN films at elevated temperatures supports innovations in:

Wide-Bandgap Power Devices: Serving as insulating or passivation layers for GaN- or SiC-based electronics.

Embedded Sensors: Enabling strain or temperature monitoring in jet engines, nuclear systems, and energy reactors.

AlN sputtering target


 


Consult

Guestbook

  • Name:

  • Tel:

  • Email:

  • Content:

Related

Warmly welcome new and regular customers' inquiry!

Contact Us

ICP:鲁ICP备18046268号-1  鲁公网安备37048102006786号  XMLMap  

Address:New Business Building, Tengzhou City, China

Online Tel. QR code

Hotline

+86 13310681862

Scan and follow us