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Tungsten Oxide (WO3) Sputtering Target

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Tungsten Oxide Sputtering TargetTransition metal oxides like SnO2, TiO2, V2O5, WO3, etc., have generated important attention in recent years owing to their versatile characteristics leading to strategic applications in electrochromic devices, gas sensing, photocatalysis, etc. Tungsten trioxide WO3 h...

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Tungsten Oxide Sputtering Target

Transition metal oxides like SnO2, TiO2, V2O5, WO3, etc., have generated important attention in recent years owing to their versatile characteristics 

leading to strategic applications in electrochromic devices, gas sensing, photocatalysis, etc. Tungsten trioxide WO3 has generated significant attention 

due to its exceptional characteristics such as electrochromic, photochromic, and gasochromic properties. WO3 thin films are interesting vis-a-vis 

corresponding bulk crystals because of modified defect states, altered lattice strains, manifested structural distortions, larger specific surface areas, 

exotic polar topologies, etc. 


The transition metal oxide tungsten oxide (WO3), an oxygen-deficient n-type wide band gap semiconductor material with an electronic bandgap 

of ~2.6–3.0 eV. Because of its high melting temperature, photo electrochromic, toughness, and mechanical properties, it is regarded as a potential 

candidate for optical and electrical applications. Nanostructured WO3 has a high specific surface area and good surface permeability. 

WO3 nanostructures is used in a variety of ares, including gas sensors, efficient water splitting, photoelectrocatalytic activity, memory devices,

 photodetectors, and high temperature diodes. At present, nanostructured WO3 are deposited on various substrates to fabricate optical and electrical devices. 

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WO3_Sputtering_target.png.



Specifications
Material TypeTungsten Oxide
SymbolWO3
Purity99.95%
Size1.00" Dia. x 0.125" Thick ~8.00" Dia x  0.250" Thick / Custom
Package Unit1pc
Theoretical Density (g/cc)7.16
Melting Point (°C)1837 °CSputterRF, RF-R, DC


 


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