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Aluminum Nitride (AlN) Sputtering Target

Description:

Aluminum Nitride (AlN) Sputtering TargetAluminum Nitride's properties are as below:Good dielectric propertiesHigh thermal conductivityLow thermal expansion coefficientClose to that of SiliconNon-reactive with normal semiconductor process chemicals and gasesAluminunm Nitride sputtering target&nbs...

Detail

Aluminum Nitride (AlN) Sputtering Target


AlN is a wide-bandgap semiconductor with excellent thermal conductivity, exhibits pieznoelectrocity, high electrical resistivity, and high mechanical strength. Aluminium nitride is 

widely used as an isolation medium and insulating material in the packaging of electronic devices and integrated circuits. High-quality AlN film also has a very high ultrasonic 

transmission speed, small acoustic wave loss, considerable piezoelectric coupling constant, and Si, GaAs similar to the coefficient of thermal expansion and other characteristics 

of the unique properties make it in the mechanical, microelectronics, optics, and electronic components, surface-wave acoustic device manufacturing and high-frequency 

broadband communications and other fields have a broad range of applications.


Aluminum nitride (AlN) is an important semiconductor material due to its excellent physical and chemical properties. Owing to its ultra-wide band gap, excellent ultraviolet 

transparency, and chemical stability, AlN can act as the substrate material for ultraviolet (UV)/deep ultraviolet (DUV) light-emitting diodes (LEDs), UV laser diodes (LDs) 

and solar-blind UV detectors applications and may meet the application requirements of microelectromechanical systems (MEMS) and high-temperature, high-power, 

high-frequency, and radiation-resistant devices. The direct band gap of AlN is 6.2 eV at room temperature (RT), and it plays an important role in deep-ultraviolet devices, 

such as AlN-based UV-LED, which has great potential in UV curing, UV medical treatment, UV catalysis, UV sterilization, UV communication, high-density storage, etc. 

Since AlN has a high carrier migration rate and ultra-high breakdown field strength, the overall performance of AlN-based high-power, high-frequency electronic devices 

have incomparable advantages and efficiency over other wide band gap semiconductor materials such as silicon carbide (SiC), etc.


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AlN sputtering target

Specifications
Material TypeAluminum Nitride
SymbolAlN
Purity99.9%
Size1.00" Dia. x 0.125" Thick ~8.00" Dia x  0.250" Thick / Custom
Package Unit1pc
Atomic Weight107.8682Z Ratio1
Color/AppearanceBluish White, Crystalline SolidSputterRF-R
Theoretical Density (g/cc)3.26Max Power Density(Watts/Square Inch)20*
Melting Point (°C)>2,200Type of BondIndium, Elastomer
Coefficient of Thermal Expansion18.9 x 10-6/KCommentsDecomposes. Reactive evap in 10-3 T N2 with glow discharge.


 


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