Molybdenum Trioxide (MoO₃) Sputtering Target

Molybdenum trioxide (MoO₃) sputtering targets are engineered to meet the rigorous demands of academic and industrial thin-film research. 

With ultra-high purity (>99.99%), exceptional stoichiometric control, and uniform density, these targets are ideal for PVD 

(magnetron sputtering, thermal evaporation) and ALD (atomic layer deposition) processes. 

Key applications in research laboratories include:

1. Next-Generation Optoelectronics & Flexible Devices

Thin-Film Transistors (TFTs): Optimizing charge transport layers for flexible displays, wearable sensors, and IoT-compatible electronics.

Transparent Electrodes: Depositing MoO₃-based interfacial layers to enhance efficiency in organic LEDs (OLEDs) 

and perovskite light-emitting diodes (PeLEDs).

2D Material Integration: Modifying interfaces in graphene, MoS₂, or WS₂ heterostructures for tailored electronic properties.

2. Energy Materials & Photovoltaics

Perovskite Solar Cells: Serving as efficient hole-selective contacts to minimize recombination losses and improve device stability.

Photoelectrochemical (PEC) Systems: Fabricating catalytic coatings for hydrogen evolution or CO₂ reduction studies.

Solid-State Batteries: Investigating MoO₃ thin films as anode/cathode interlayers to enhance ion transport kinetics.

3. Functional Coatings & Surface Engineering

Smart Windows: Developing electrochromic/thermochromic films for dynamic optical modulation in energy-efficient buildings.

Corrosion-Resistant Barriers: Studying ultrathin MoO₃ coatings for aerospace alloys or biomedical implants under extreme conditions.

4. Nanoelectronics & Quantum Materials

Memristors: Exploring MoO₃-based resistive switching layers for neuromorphic computing architectures.

Nanoscale Sensors: Designing gas-sensitive or plasmonic films for ultrasensitive detection of environmental pollutants.

5. Fundamental Material Science

Bandgap Engineering: Tuning MoO₃’s electronic structure (n-type semiconductor, ~3.0 eV bandgap) via doping or heterojunction design.

In-Situ Growth Studies: Leveraging ALD compatibility for atomic-level control in epitaxial thin-film synthesis.

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