Chromium Silicide (CrSi2 ) Sputtering Targets

Such properties of CrSi2 as the high temperature of melting, the resistance to oxidation and the capability of standing a considerable

deformation make it a prospective material 

under the conditions of the energy influences. Earlier, CrSi2 layers were mainly applied as the barriers of Schottky diodes.

At present, the CrSi2 layers are also used as a joint between silicon and the working element in the integrated circuits and the sensors

owing to the low transient resistance and the semiconductor properties. 

This peculiarity in combination with a good compatibility with the regular silicon technologies makes it possible to successfully apply 

CrSi2 in the thermoelectric and photoelectric devices. The narrow prohibited zone makes it suitable for application in the converters 

and sensors in micro- and nanoelectronics.

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