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Germanium Telluride, GeTe (sputtering target)

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​Germanium-Tellurium alloy used in Phase-change Memory (PCM)....

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Germanium Telluride (GeTe) Sputtering Target


Germanium telluride (GeTe) is a phase-change material (PCM) from chalcogenide family, which undergoes reversible transition between amorphous 

and crystalline phase when subjected to optical or electrical pulse. The fast structural reversibility poses GeTe as an ideal material for data storage devices. 

GeTe is one of the best candidates for non-volatile memory technologies because of its high speed, low power consumption, scalability, data retention, and storage capacity.

Ge2Sb2Te5 sputtering target


Specifications
Material TypeGermanium Telluride
SymbolGeTe
Purity99.99%
Size1.00" Dia. x 0.125" Thick ~8.00" Dia x  0.250" Thick / Custom
Package Unit1pc


 


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