Hotline
+86 13310681862
Description:
Nickel oxide (NiO) is an important wide band gap semiconductor material with a band gap width of approximately 3.6 to 4.0 eV. As one of the rare p-type semiconductors in transition metal oxides, nickel oxide has a stable band gap and excellent electrochromic properties. As a new functional material,...
Nickel oxide (NiO) is an important wide band gap semiconductor material with a band gap width of approximately 3.6 to 4.0 eV.
As one of the rare p-type semiconductors in transition metal oxides, nickel oxide has a stable band gap and excellent electrochromic properties.
As a new functional material, NiO has applications in many fields, such as a hole-transporting layer in solar cells, as a p-type transparent semiconductor,
and as an electrochromic layer or an ion storage layer in electrochromic devices.
As one of the best anode electrochromic materials, NiO is often used to form complementary electrochromic devices with cathode electrochromic
materials like WO3, and this type of electrochromic device has better optics modulation capability.
For questions about target material or anything we can hlep, please click here.
Specifications | |||
Material Type | Nickel Oxide | ||
Symbol | NiO | ||
Purity | 99.9% | ||
Size | 1.00" Dia. x 0.125" Thick ~8.00" Dia x 0.250" Thick / Custom | ||
Package Unit | 1pc | ||
Theoretical Density (g/cc) | 6.67 | ||
Melting Point (°C) | 1960 °C | Sputter | RF, RF-R, DC |
Type of Bond | Indium, Elastomer | Max Power Density (Watts/Square Inch) | -- |
Previous:Nickel Sputtering Target
Warmly welcome new and regular customers' inquiry!
Contact Us
ICP:鲁ICP备18046268号-1 鲁公网安备37048102006786号 XMLMap
Address:New Business Building, Tengzhou City, China