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Zinc Sulfide (ZnS) Sputtering Target

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Zinc Sulfide ZnS sputtering targetsZinc sulfide (ZnS) sputtering targets are high-performance materials widely utilized in thin-film deposition processes, particularly for advanced optical and functional coatings. Renowned for their exceptional physical and chemical properties, ZnS targets are...

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Zinc Sulfide ZnS sputtering targets 


Zinc sulfide (ZnS) sputtering targets are high-performance materials widely utilized in thin-film deposition processes, 

particularly for advanced optical and functional coatings. Renowned for their exceptional physical and chemical properties,

ZnS targets are engineered to meet stringent research requirements in academic and industrial settings. 


1. Performance Advantages

High Purity: Our ZnS targets are available with purity levels ≥99.99%, minimizing impurities that could compromise film quality.

Broad Optical Transparency: ZnS films exhibit excellent transmission across a wide spectral range (0.4–14 μm), 

making them ideal for infrared (IR) and visible-light applications.


Superior Laser Damage Threshold: With a high laser-induced damage threshold (LIDT), ZnS coatings are suitable for high-power laser systems.


Controlled Stoichiometry: Precise control of Zn:S ratio (1:1) ensures reproducible optical and electrical properties.


Chemical Stability: Resistant to moisture and oxidation, ZnS films maintain performance in harsh environments.


2. Fabrication Methods

ZnS targets are manufactured using advanced techniques to ensure density, homogeneity, and phase purity:


Hot Pressing (HP): High-purity ZnS powder is consolidated under controlled temperatures (800–1000°C) and pressures (30–50 MPa), 

yielding targets with >98% theoretical density and uniform microstructure.


Chemical Vapor Deposition (CVD): For ultra-high-purity applications, CVD-grown ZnS targets provide exceptional stoichiometric 

control and minimal grain boundaries, though at a higher production cost.


Both methods undergo rigorous post-processing, including diamond grinding and ultrasonic cleaning, to achieve surface roughness <0.5 μm (Ra).


3. Sputtering Process Parameters

Optimal sputtering conditions are critical for high-quality ZnS film deposition. Key parameters include:


Substrate Temperature: 25–300°C (adjustable for amorphous or polycrystalline structures).


Sputtering Power: DC Magnetron: 50–150 W (power density: 1–3 W/cm²).


RF Magnetron: 100–300 W (for reactive sputtering with Ar/O₂ or Ar/N₂ mixtures).


Working Pressure: 0.5–3.0 Pa (balance between deposition rate and film stress).


Gas Composition: Pure Ar for non-reactive sputtering; Ar + 5–10% reactive gas (O₂/N₂) for tailored film properties.


Pre-sputtering etching (5–10 min, 20–30 W RF) is recommended to remove surface contaminants.


4. Applications

ZnS thin films are pivotal in cutting-edge research and technology:


Infrared Optics: Anti-reflective (AR) and protective coatings for IR windows, lenses, and thermal imaging systems.


Photovoltaics: Buffer layers in CIGS solar cells to enhance carrier transport.


Electroluminescent Devices: Active layers in thin-film electroluminescent (TFEL) displays.


Decorative Coatings: Durable, high-refractive-index films for architectural glass.


Semiconductor Research: Gate dielectrics and passivation layers in emerging electronic devices.


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ZnS sputtering target

Specifications
Material TypeZinc Sulfide
SymbolZnS
Purity99.99%
Size1.00" Dia. x 0.125" Thick ~8.00" Dia x  0.250" Thick / Custom
Package Unit1pc
Theoretical Density (g/cc)3.98
Melting Point (°C)1,700SputterRF
Type of BondIndium, ElastomerMax Power Density
(Watts/Square Inch)
20*
CommentsPreheat gently to outgas. Films partially decompose. n=2.356.Color/AppearanceYellow, Crystalline Solid


 


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