High-Purity Tellurium (Te) Sputtering Targets (99.999%)

High-purity tellurium (99.999%) sputtering targets exhibit exceptional material consistency and minimized impurity interference, 

ensuring high-quality thin-film deposition. The ultra-low metallic impurities (<10 ppm total) reduce defect formation in films, 

critical for applications requiring precise electronic or optical properties510. Tellurium’s narrow bandgap (~0.35 eV) and excellent 

thermal stability enable efficient charge transport and durability under high-temperature processing, making it ideal for advanced 

optoelectronic and semiconductor devices.

Sputtering Process Parameters

Optimal sputtering conditions for Te targets include:

Power Density: 2–5 W/cm² to balance deposition rate and film uniformity.

Substrate Temperature: Maintained at 100–300°C to enhance adatom mobility and film crystallinity.

Sputtering Pressure: 1–5 mTorr in an argon atmosphere to minimize gas-phase scattering and ensure stoichiometric transfer.

Bias Voltage: Controlled at 50–200 V to tailor film morphology and stress.

Parameter adjustments are critical for achieving desired film properties, such as conductivity or transparency, in applications 

like infrared detectors or phase-change memory devices.

Application Directions

Infrared Optics: Te thin films are pivotal in manufacturing infrared lenses and sensors due to their broad transmission range (3–20 μm).

Thermoelectric Materials: High-purity Te enhances the figure of merit (ZT) in Bi₂Te₃-based thermoelectric modules for energy harvesting.

Phase-Change Memory (PCM): Te alloys (e.g., Ge-Sb-Te) enable ultrafast switching in non-volatile memory devices.

Photovoltaics: Used in CdTe thin-film solar cells, where purity directly impacts conversion efficiency.

Quantum Materials: Serves as a precursor for topological insulators (e.g., Bi₂Se₃/Te₃) in advanced photodetectors and spintronic systems.

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