High-Purity Selenium (Se) Sputtering Targets

High-purity selenium (Se) sputtering targets exhibit unique semiconductor and photoelectric properties, making them essential for advanced thin-film research. 

Key characteristics include:

Ultra-High Purity: ≥99.999% (5N) purity ensures minimal impurity interference, critical for high-performance optoelectronic and semiconductor applications.

Crystalline Structure: Trigonal crystal structure (space group P3₁21) with anisotropic electrical and optical behavior, enabling tailored thin-film properties.

Physical Properties:

Density: 4.81 g/cm³ at 20°C.

Melting point: 221°C; Sublimation point: 685°C.

Bandgap: ~1.74 eV (amorphous) to ~1.89 eV (crystalline), suitable for infrared and visible light applications.

Electrical Properties: High photoconductivity and carrier mobility (up to 0.7 cm²/V·s), ideal for photodetectors and photovoltaic devices.

Sputtering Process Parameters

To achieve high-quality selenium thin films, precise control of sputtering conditions is critical:

Power and Pressure:

DC/RF magnetron sputtering is recommended, with power density maintained at 2–5 W/cm² to prevent thermal decomposition of Se.

Argon gas pressure: 0.5–1.0 Pa, balancing deposition rate (5–15 nm/min) and film uniformity.

Substrate Temperature: Optimized at 80–150°C to enhance crystallinity while avoiding Se sublimation.

Target Bonding: Oxygen-free copper (OFC) or molybdenum backing plates (2–4 mm thickness) ensure efficient heat dissipation and mechanical stability.

Pre-sputtering Treatment: Surface polishing (Ra <0.2 μm) and argon plasma cleaning to eliminate oxide layers and particulate contamination.

Post-Deposition Annealing: Optional thermal treatment (150–200°C in N₂ atmosphere) to improve film stoichiometry and reduce defects.

Application Directions

Selenium targets are pivotal in cutting-edge research and industrial applications:

Optoelectronics:

Fabrication of photodetectors and infrared sensors, leveraging Se’s narrow bandgap and high photoresponsivity.

Integration with Bi₂Se₃ topological insulators for high-speed quantum devices and spintronic applications.

Energy Technologies:

Thin-film solar cells (e.g., Cu₂ZnSn(S,Se)₄), where Se doping optimizes band alignment and reduces interfacial recombination.

Thermoelectric materials (e.g., Bi₂Te₃-Se alloys), enhancing ZT values via carrier concentration modulation.

Advanced Coatings:

Anti-reflective and protective layers for infrared optics, utilizing Se’s transparency in the 1–20 μm wavelength range.

Semiconductor Research:

Deposition of chalcogenide phase-change materials (e.g., Ge-Sb-Se) for non-volatile memory and neuromorphic computing.

Why Choose Our Se Targets?

Our selenium targets are synthesized via zone refining and vacuum distillation, achieving sub-ppm metallic impurities (e.g., Fe, Cu <1 ppm). 

Custom geometries (discs, rectangular plates) and ISO 9001-certified quality control ensure reproducibility for academic and industrial R&D.

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