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Aluminum Nitride (AlN) Sputtering Target

Description:

Aluminum Nitride (AlN) Sputter TargetApplications of AlN sputter target:1. Electronic Packaging and Thermal Management FilmsHeat dissipation layers for high-power electronic devices (e.g., LEDs, laser diodes, power semiconductors).Excellent electrical insulation, suitable as a dielectric layer betwe...

Detail

Aluminum Nitride (AlN) Sputter Target


Applications of AlN sputter target:

1. Electronic Packaging and Thermal Management Films

Heat dissipation layers for high-power electronic devices (e.g., LEDs, laser diodes, power semiconductors).

Excellent electrical insulation, suitable as a dielectric layer between chips and heat sinks.

2. Piezoelectric Thin-Film Devices

High-frequency surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) resonators, ultrasonic sensors.

3. Optical Thin Films

UV/Deep-UV Optical Windows: Protective layers for UV lasers, LEDs, or detectors.

4. Protective and Wear-Resistant Coatings

Surface protection for cutting tools and precision mechanical components.

5. Functional Films in Semiconductor Devices

Passivation Layers: Protect semiconductor surfaces from environmental degradation.

Insulating Layers: Buffer layers for epitaxial growth of wide-bandgap semiconductors (e.g., GaN, SiC).


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AlN sputtering target

Specifications
Material TypeAluminum Nitride
SymbolAlN
Purity99.9%
Size1.00" Dia. x 0.125" Thick ~8.00" Dia x  0.250" Thick / Custom
Package Unit1pc
Atomic Weight107.8682Z Ratio1
Color/AppearanceBluish White, Crystalline SolidSputterRF-R
Theoretical Density (g/cc)3.26Max Power Density(Watts/Square Inch)20*
Melting Point (°C)>2,200Type of BondIndium, Elastomer
Coefficient of Thermal Expansion18.9 x 10-6/KCommentsDecomposes. Reactive evap in 10-3 T N2 with glow discharge.


 


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