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Description:
Aluminum Nitride (AlN) Sputter TargetApplications of AlN sputter target:1. Electronic Packaging and Thermal Management FilmsHeat dissipation layers for high-power electronic devices (e.g., LEDs, laser diodes, power semiconductors).Excellent electrical insulation, suitable as a dielectric layer betwe...
Applications of AlN sputter target:
1. Electronic Packaging and Thermal Management Films
Heat dissipation layers for high-power electronic devices (e.g., LEDs, laser diodes, power semiconductors).
Excellent electrical insulation, suitable as a dielectric layer between chips and heat sinks.
2. Piezoelectric Thin-Film Devices
High-frequency surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) resonators, ultrasonic sensors.
3. Optical Thin Films
UV/Deep-UV Optical Windows: Protective layers for UV lasers, LEDs, or detectors.
4. Protective and Wear-Resistant Coatings
Surface protection for cutting tools and precision mechanical components.
5. Functional Films in Semiconductor Devices
Passivation Layers: Protect semiconductor surfaces from environmental degradation.
Insulating Layers: Buffer layers for epitaxial growth of wide-bandgap semiconductors (e.g., GaN, SiC).
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Specifications | |||
Material Type | Aluminum Nitride | ||
Symbol | AlN | ||
Purity | 99.9% | ||
Size | 1.00" Dia. x 0.125" Thick ~8.00" Dia x 0.250" Thick / Custom | ||
Package Unit | 1pc | ||
Atomic Weight | 107.8682 | Z Ratio | 1 |
Color/Appearance | Bluish White, Crystalline Solid | Sputter | RF-R |
Theoretical Density (g/cc) | 3.26 | Max Power Density(Watts/Square Inch) | 20* |
Melting Point (°C) | >2,200 | Type of Bond | Indium, Elastomer |
Coefficient of Thermal Expansion | 18.9 x 10-6/K | Comments | Decomposes. Reactive evap in 10-3 T N2 with glow discharge. |
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